Справочник MOSFET. NCE60P25

 

NCE60P25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60P25
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 391 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NCE60P25

 

 

NCE60P25 Datasheet (PDF)

 ..1. Size:358K  ncepower
 nce60p25.pdf

NCE60P25 NCE60P25

Pb Free Producthttp://www.ncepower.com NCE60P25NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 0.1. Size:397K  ncepower
 nce60p25k.pdf

NCE60P25 NCE60P25

Pb Free Producthttp://www.ncepower.com NCE60P25KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 0.2. Size:805K  cn vbsemi
 nce60p25k.pdf

NCE60P25 NCE60P25

NCE60P25Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bri

 7.1. Size:347K  ncepower
 nce60p20k.pdf

NCE60P25 NCE60P25

http://www.ncepower.com NCE60P20KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.2. Size:383K  ncepower
 nce60p28ak.pdf

NCE60P25 NCE60P25

NCE60P28AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

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