Справочник MOSFET. NCE6525Q

 

NCE6525Q Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6525Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.1 ns
   Cossⓘ - Выходная емкость: 158 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: DFN3.3X3.3-8L
     - подбор MOSFET транзистора по параметрам

 

NCE6525Q Datasheet (PDF)

 ..1. Size:304K  ncepower
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NCE6525Q

Pb Free Producthttp://www.ncepower.com NCE6525QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =25A RDS(ON)

 9.1. Size:423K  1
nce65tf130t.pdfpdf_icon

NCE6525Q

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 9.2. Size:469K  ncepower
nce65t130t.pdfpdf_icon

NCE6525Q

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 9.3. Size:489K  ncepower
nce65t540i nce65t540k.pdfpdf_icon

NCE6525Q

NCE65T540INCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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History: PDC3908X | WMM50P04T1 | IAUC100N10S5N040 | STU601S | 6N65KG-TF1-T | FDBL0240N100 | AP9938GEO

 

 
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