NCE6525Q. Аналоги и основные параметры

Наименование производителя: NCE6525Q

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.1 ns

Cossⓘ - Выходная емкость: 158 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm

Тип корпуса: DFN3.3X3.3-8L

Аналог (замена) для NCE6525Q

- подборⓘ MOSFET транзистора по параметрам

 

NCE6525Q даташит

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NCE6525Q

Pb Free Product http //www.ncepower.com NCE6525Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =25A RDS(ON)

 9.1. Size:423K  1
nce65tf130t.pdfpdf_icon

NCE6525Q

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 9.2. Size:469K  ncepower
nce65t130t.pdfpdf_icon

NCE6525Q

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 9.3. Size:489K  ncepower
nce65t540i nce65t540k.pdfpdf_icon

NCE6525Q

NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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