Справочник MOSFET. NCE65N180T

 

NCE65N180T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N180T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 194 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCE65N180T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N180T Datasheet (PDF)

 ..1. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180T

NCE65N180TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180T

NCE65N180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industrial

 5.2. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180T

NCE65N180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.3. Size:725K  ncepower
 nce65n180d.pdf pdf_icon

NCE65N180T

NCE65N180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60PD05S , NCE60T2K2I , NCE60T2K2K , NCE6525Q , NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , AO3407 , NCE65N180V , NCE65N1K2D , NCE65N1K2F , NCE65N1K2I , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D .

History: IPD90N06S4-05 | AUIRF8736M2TR | MTP4835Q8 | AONR34332C

 

 
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