NCE65N230I. Аналоги и основные параметры

Наименование производителя: NCE65N230I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 172 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm

Тип корпуса: TO251

Аналог (замена) для NCE65N230I

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N230I даташит

 ..1. Size:751K  ncepower
 nce65n230i.pdf pdf_icon

NCE65N230I

NCE65N230I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 5.1. Size:726K  ncepower
 nce65n230k.pdf pdf_icon

NCE65N230I

NCE65N230K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 5.2. Size:752K  ncepower
 nce65n230f.pdf pdf_icon

NCE65N230I

NCE65N230F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 5.3. Size:767K  ncepower
 nce65n230d.pdf pdf_icon

NCE65N230I

NCE65N230D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N1K2D, NCE65N1K2F, NCE65N1K2I, NCE65N1K2K, NCE65N1K2R, NCE65N230, NCE65N230D, NCE65N230F, IRF540N, NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F, NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D