NCE65N330K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65N330K
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 107 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 31 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.33 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCE65N330K
NCE65N330K Datasheet (PDF)
nce65n330k.pdf
NCE65N330KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330.pdf
NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial
nce65n330d.pdf
NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330i.pdf
NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330r.pdf
NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330f.pdf
NCE65N330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
