Справочник MOSFET. NCE65N330R

 

NCE65N330R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N330R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
   Тип корпуса: SOT-223
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N330R Datasheet (PDF)

 ..1. Size:752K  ncepower
 nce65n330r.pdf pdf_icon

NCE65N330R

NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 5.1. Size:754K  ncepower
 nce65n330.pdf pdf_icon

NCE65N330R

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial

 5.2. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330R

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 5.3. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330R

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE65N290F , NCE65N290I , NCE65N290K , NCE65N330 , NCE65N330D , NCE65N330F , NCE65N330I , NCE65N330K , IRF9540 , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , NCE65N520 , NCE65N520D , NCE65N520F .

 

 
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