Справочник MOSFET. NCE65N460F

 

NCE65N460F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N460F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

NCE65N460F Datasheet (PDF)

 ..1. Size:726K  ncepower
 nce65n460f.pdf pdf_icon

NCE65N460F

NCE65N460FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 5.1. Size:716K  ncepower
 nce65n460k.pdf pdf_icon

NCE65N460F

NCE65N460KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 5.2. Size:724K  ncepower
 nce65n460.pdf pdf_icon

NCE65N460F

NCE65N460N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industri

 5.3. Size:711K  ncepower
 nce65n460d.pdf pdf_icon

NCE65N460F

NCE65N460DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

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History: WMP80R1K0S | SDF120JDA-D | FDPF8N50NZU | DG840 | IRLU3715 | KNB1906A | FMV17N60ES

 

 
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