Справочник MOSFET. NCE65N900

 

NCE65N900 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N900
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 59 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.1 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE65N900

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N900 Datasheet (PDF)

 ..1. Size:803K  ncepower
 nce65n900.pdf pdf_icon

NCE65N900

NCE65N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and industr

 0.1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900

NCE65N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 0.2. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900

NCE65N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 0.3. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900

NCE65N900DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , NCE65N800R , TK10A60D , NCE65N900D , NCE65N900F , NCE65N900I , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 , NCE65NF036T .

History: DMG2305UX | HFP50N06A | 100N10NF

 

 
Back to Top

 


 
.