Справочник MOSFET. NCE65N900R

 

NCE65N900R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE65N900R
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 5.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 5.1 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 9 nC
   Время нарастания (tr): 3 ns
   Выходная емкость (Cd): 12 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для NCE65N900R

 

 

NCE65N900R Datasheet (PDF)

 ..1. Size:834K  ncepower
 nce65n900r.pdf

NCE65N900R NCE65N900R

NCE65N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.1. Size:788K  ncepower
 nce65n900i.pdf

NCE65N900R NCE65N900R

NCE65N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.2. Size:788K  ncepower
 nce65n900d.pdf

NCE65N900R NCE65N900R

NCE65N900DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.3. Size:803K  ncepower
 nce65n900.pdf

NCE65N900R NCE65N900R

NCE65N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and industr

 5.4. Size:792K  ncepower
 nce65n900f.pdf

NCE65N900R NCE65N900R

NCE65N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.5. Size:795K  ncepower
 nce65n900k.pdf

NCE65N900R NCE65N900R

NCE65N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

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