NCE65N900R. Аналоги и основные параметры

Наименование производителя: NCE65N900R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.1 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 12 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: SOT223

Аналог (замена) для NCE65N900R

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N900R даташит

 ..1. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900R

NCE65N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900R

NCE65N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.2. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900R

NCE65N900D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.3. Size:803K  ncepower
 nce65n900.pdf pdf_icon

NCE65N900R

NCE65N900 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, NCE65N900K, IRFB3607, NCE65NF023T, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, NCE65NF050T, NCE65NF068, NCE65NF068D, NCE65NF068F