Справочник MOSFET. FQAF11N90C

 

FQAF11N90C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQAF11N90C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: TO247 TO3P TO3PF
 

 Аналог (замена) для FQAF11N90C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQAF11N90C Datasheet (PDF)

 ..1. Size:633K  fairchild semi
fqaf11n90c.pdfpdf_icon

FQAF11N90C

QFETFQAF11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fa

 5.1. Size:662K  fairchild semi
fqaf11n90.pdfpdf_icon

FQAF11N90C

September 2000TMQFETQFETQFETQFETFQAF11N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has

 7.1. Size:695K  fairchild semi
fqaf11n40.pdfpdf_icon

FQAF11N90C

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has bee

 9.1. Size:525K  fairchild semi
fqaf19n60.pdfpdf_icon

FQAF11N90C

April 2000TMQFETQFETQFETQFETFQAF19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has be

Другие MOSFET... FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 , FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 , FQA9P25 , IRF1405 , FQAF13N80 , SDD06N70 , FQAF16N50 , FQB11P06 , FQB12P20 , FQB19N20 , SDD05N70 , FQB19N20C .

History: STE339S | 2N6787 | 2SK4125

 

 
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