NCE65NF068D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65NF068D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 371 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 45 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 65 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 132 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.068 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCE65NF068D
NCE65NF068D Datasheet (PDF)
nce65nf068d.pdf
NCE65NF068DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf068ll.pdf
NCE65NF068LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industri
nce65nf068t.pdf
NCE65NF068TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf068v.pdf
NCE65NF068VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65nf068.pdf
NCE65NF068N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industrial
nce65nf068f.pdf
NCE65NF068FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STB32N65M5
