NCE65NF099D. Аналоги и основные параметры

Наименование производителя: NCE65NF099D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 346 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 96 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCE65NF099D

- подборⓘ MOSFET транзистора по параметрам

 

NCE65NF099D даташит

 ..1. Size:709K  ncepower
 nce65nf099d.pdf pdf_icon

NCE65NF099D

NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 4.1. Size:856K  ncepower
 nce65nf099t.pdf pdf_icon

NCE65NF099D

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 4.2. Size:726K  ncepower
 nce65nf099ll.pdf pdf_icon

NCE65NF099D

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A

 4.3. Size:709K  ncepower
 nce65nf099v.pdf pdf_icon

NCE65NF099D

NCE65NF099V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65NF050T, NCE65NF068, NCE65NF068D, NCE65NF068F, NCE65NF068LL, NCE65NF068T, NCE65NF068V, NCE65NF099, IRF1407, NCE65NF099F, NCE65NF099LL, NCE65NF099T, NCE65NF099V, NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K