NCE65NF190F. Аналоги и основные параметры

Наименование производителя: NCE65NF190F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 33.9 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO-220F

Аналог (замена) для NCE65NF190F

- подборⓘ MOSFET транзистора по параметрам

 

NCE65NF190F даташит

 ..1. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190F

NCE65NF190F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190F

NCE65NF190LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industr

 4.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190F

NCE65NF190K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.3. Size:707K  ncepower
 nce65nf190t.pdf pdf_icon

NCE65NF190F

NCE65NF190T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65NF099, NCE65NF099D, NCE65NF099F, NCE65NF099LL, NCE65NF099T, NCE65NF099V, NCE65NF190, NCE65NF190D, 18N50, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K