NCE65T180V. Аналоги и основные параметры

Наименование производителя: NCE65T180V

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 188 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 83 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm

Тип корпуса: DFN8X8

Аналог (замена) для NCE65T180V

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T180V даташит

 ..1. Size:494K  ncepower
 nce65t180v.pdf pdf_icon

NCE65T180V

NCE65T180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 199 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 5.1. Size:622K  ncepower
 nce65t180d nce65t180 nce65t180f.pdf pdf_icon

NCE65T180V

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 5.2. Size:1722K  ncepower
 nce65t180f nce65t180 nce65t180d.pdf pdf_icon

NCE65T180V

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus

 5.3. Size:1722K  ncepower
 nce65t180f.pdf pdf_icon

NCE65T180V

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, 2N60, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F, NCE70N100I, NCE70N1K1D