NCE65T1K9K. Аналоги и основные параметры

Наименование производителя: NCE65T1K9K

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 22 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 10 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCE65T1K9K

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T1K9K даташит

 ..1. Size:481K  ncepower
 nce65t1k9i nce65t1k9k.pdf pdf_icon

NCE65T1K9K

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:481K  ncepower
 nce65t1k9k.pdf pdf_icon

NCE65T1K9K

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:481K  ncepower
 nce65t1k9i.pdf pdf_icon

NCE65T1K9K

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 6.1. Size:599K  ncepower
 nce65t1k2 nce65t1k2d nce65t1k2f.pdf pdf_icon

NCE65T1K9K

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

ПОКАЗАТЬ ЕЩЁ

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