NCE70N1K4I. Аналоги и основные параметры

Наименование производителя: NCE70N1K4I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 17 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO-251

Аналог (замена) для NCE70N1K4I

- подборⓘ MOSFET транзистора по параметрам

 

NCE70N1K4I даташит

 ..1. Size:814K  ncepower
 nce70n1k4i.pdf pdf_icon

NCE70N1K4I

NCE70N1K4I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.1. Size:794K  ncepower
 nce70n1k4k.pdf pdf_icon

NCE70N1K4I

NCE70N1K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.2. Size:870K  ncepower
 nce70n1k4r.pdf pdf_icon

NCE70N1K4I

NCE70N1K4R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

 5.3. Size:803K  ncepower
 nce70n1k4f.pdf pdf_icon

NCE70N1K4I

NCE70N1K4F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE70H10F, NCE70N100I, NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, IRFB7545, NCE70N1K4K, NCE70N1K4R, NCE70N290, NCE70N290D, NCE70N290F, NCE70N290I, NCE70N290K, NCE70N380