2SK2978Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-659B (Z)3rd. EditionJun 1998Features Low on-resistanceRDS(on) = 0.09 typ. (VGS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices.OutlineUPAK123D4G1. Gate2. Drain3. Source4. DrainS2SK2978Absolute Maximum Ratings (Ta = 25 C)Item

Ordering number:ENN6003N-Channel Silicon MOSFET2SK2976DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2083B[2SK2976]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2976]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0.22 :

Ordering number:ENN6423N-Channel Silicon MOSFET2SK2977LSDC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2078B[2SK2977LS]4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO220FI-LSSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

isc N-Channel MOSFET Transistor 2SK2977LSFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid