NCE70N600F. Аналоги и основные параметры
Наименование производителя: NCE70N600F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 31.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 21 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.61 Ohm
Тип корпуса: TO-220F
Аналог (замена) для NCE70N600F
- подборⓘ MOSFET транзистора по параметрам
NCE70N600F даташит
..1. Size:760K ncepower
nce70n600f.pdf 
NCE70N600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust
5.1. Size:783K ncepower
nce70n600.pdf 
NCE70N600 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and industr
5.2. Size:789K ncepower
nce70n600k.pdf 
NCE70N600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust
8.1. Size:809K ncepower
nce70n380k.pdf 
NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.2. Size:794K ncepower
nce70n1k4k.pdf 
NCE70N1K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.3. Size:791K ncepower
nce70n1k1k.pdf 
NCE70N1K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.4. Size:814K ncepower
nce70n290.pdf 
NCE70N290 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indus
8.5. Size:813K ncepower
nce70n900f.pdf 
NCE70N900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.6. Size:842K ncepower
nce70n900r.pdf 
NCE70N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.7. Size:817K ncepower
nce70n380.pdf 
NCE70N380 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and ind
8.8. Size:941K ncepower
nce70n380t.pdf 
NCE70N380T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.9. Size:826K ncepower
nce70n900i.pdf 
NCE70N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industr
8.10. Size:870K ncepower
nce70n1k4r.pdf 
NCE70N1K4R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.11. Size:804K ncepower
nce70n1k1f.pdf 
NCE70N1K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.12. Size:800K ncepower
nce70n290d.pdf 
NCE70N290D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.13. Size:800K ncepower
nce70n900k.pdf 
NCE70N900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.14. Size:811K ncepower
nce70n1k1i.pdf 
NCE70N1K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.15. Size:814K ncepower
nce70n1k4i.pdf 
NCE70N1K4I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.16. Size:804K ncepower
nce70n290i.pdf 
NCE70N290I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.17. Size:783K ncepower
nce70n290f.pdf 
NCE70N290F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.18. Size:938K ncepower
nce70n290t.pdf 
NCE70N290T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.19. Size:873K ncepower
nce70n1k1r.pdf 
NCE70N1K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.20. Size:863K ncepower
nce70n380r.pdf 
NCE70N380R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.21. Size:825K ncepower
nce70n380i.pdf 
NCE70N380I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.22. Size:798K ncepower
nce70n900.pdf 
NCE70N900 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industri
8.23. Size:781K ncepower
nce70n380f.pdf 
NCE70N380F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.24. Size:390K ncepower
nce70n100i.pdf 
Pb Free Product http //www.ncepower.com NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID =57A RDS(ON)
8.25. Size:786K ncepower
nce70n1k1d.pdf 
NCE70N1K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.26. Size:804K ncepower
nce70n380d.pdf 
NCE70N380D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.27. Size:806K ncepower
nce70n290k.pdf 
NCE70N290K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.28. Size:803K ncepower
nce70n1k4f.pdf 
NCE70N1K4F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
Другие IGBT... NCE70N290K, NCE70N380, NCE70N380D, NCE70N380F, NCE70N380I, NCE70N380K, NCE70N380R, NCE70N600, IRF840, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F, NCE70T260I
