Справочник MOSFET. NCE75H21D

 

NCE75H21D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE75H21D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 914 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

NCE75H21D Datasheet (PDF)

 ..1. Size:293K  ncepower
nce75h21d.pdfpdf_icon

NCE75H21D

http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 6.1. Size:361K  ncepower
nce75h21t.pdfpdf_icon

NCE75H21D

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 6.2. Size:393K  ncepower
nce75h21.pdfpdf_icon

NCE75H21D

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 7.1. Size:688K  ncepower
nce75h25t.pdfpdf_icon

NCE75H21D

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTLUS3A90PZTBG | VN0335N1 | 2SK2924 | PMDXB550UNE | 4N90 | 2SJ462 | EMB17C03G

 

 
Back to Top

 


 
.