Справочник MOSFET. NCE75H25

 

NCE75H25 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE75H25
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 250 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 932 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCE75H25

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE75H25 Datasheet (PDF)

 ..1. Size:650K  ncepower
nce75h25.pdfpdf_icon

NCE75H25

http://www.ncepower.comNCE75H25NCE N-Channel Enhancement Mode Power MOSFET (Primary)DescriptionThe NCE75H25 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 0.1. Size:688K  ncepower
nce75h25t.pdfpdf_icon

NCE75H25

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 7.1. Size:361K  ncepower
nce75h21t.pdfpdf_icon

NCE75H25

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 7.2. Size:393K  ncepower
nce75h21.pdfpdf_icon

NCE75H25

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

Другие MOSFET... NCE70T540F , NCE70T680I , NCE70T680K , NCE70T900R , NCE72R60D , NCE75H21 , NCE75H21D , NCE75H21T , 2SK3878 , NCE75H25T , NCE75H35TC , NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL .

History: IXFH30N50Q3 | KF7N65FM | STY80NM60N | IRF1407PBF

 

 
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