Справочник MOSFET. NCE75H35TC

 

NCE75H35TC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE75H35TC
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 460 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 350 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 235 ns
   Cossⓘ - Выходная емкость: 1652 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCE75H35TC

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE75H35TC Datasheet (PDF)

 ..1. Size:338K  ncepower
nce75h35tc.pdfpdf_icon

NCE75H35TC

Pb Free Producthttp://www.ncepower.com NCE75H35TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON)

 8.1. Size:688K  ncepower
nce75h25t.pdfpdf_icon

NCE75H35TC

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 8.2. Size:361K  ncepower
nce75h21t.pdfpdf_icon

NCE75H35TC

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 8.3. Size:393K  ncepower
nce75h21.pdfpdf_icon

NCE75H35TC

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

Другие MOSFET... NCE70T680K , NCE70T900R , NCE72R60D , NCE75H21 , NCE75H21D , NCE75H21T , NCE75H25 , NCE75H25T , AON7408 , NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , NCE82H160D .

History: CS7456 | STF13N60M2 | SIHFD014

 

 
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