NCE82H140 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE82H140
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 82 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 140 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 445 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCE82H140
NCE82H140 Datasheet (PDF)
nce82h140.pdf

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR
nce82h140ll.pdf

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce82h140d.pdf

http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)
nce82h110d.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
Другие MOSFET... NCE75H21T , NCE75H25 , NCE75H25T , NCE75H35TC , NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , 12N60 , NCE82H140LL , NCE82H160 , NCE82H160D , NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A .
History: AP75T10GP | HGP130N12SL | 2SK655 | SI7852DP | PM516BZ | NCEP40P65QU | P5015BD
History: AP75T10GP | HGP130N12SL | 2SK655 | SI7852DP | PM516BZ | NCEP40P65QU | P5015BD



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet