NCE82H160 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE82H160
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 285 W
Предельно допустимое напряжение сток-исток |Uds|: 82 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 160 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 201 nC
Время нарастания (tr): 48 ns
Выходная емкость (Cd): 537 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: TO-220
NCE82H160 Datasheet (PDF)
nce82h160.pdf
http://www.ncepower.com NCE82H160NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)
nce82h160d.pdf
NCE82H160Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)
nce82h140.pdf
http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR
nce82h140ll.pdf
NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce82h110d.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h110.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h140d.pdf
http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)
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