FQB19N20L - параметры транзистора MOSFET, его аналоги, datasheet

FQB19N20L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FQB19N20L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO263 D2PAK

Аналог (замена) для FQB19N20L

FQB19N20L Datasheet (PDF)

..1. Size:839K fairchild semi
fqb19n20ltm fqb19n20l fqi19n20l.pdf

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

..2. Size:1034K onsemi
fqb19n20l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:831K fairchild semi
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec

6.2. Size:1167K fairchild semi
fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf

October 2008QFETFQB19N20C/FQI19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been espec

6.3. Size:1047K onsemi
fqb19n20c.pdf