NCEAP0178AK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEAP0178AK
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 78 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 65 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 354 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEAP0178AK
NCEAP0178AK Datasheet (PDF)
nceap0178ak.pdf
http://www.ncepower.com NCEAP0178AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0178AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency switc
nceap01p35ak.pdf
http://www.ncepower.comNCEAP01P35AKNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw
nceap016n60vd.pdf
http://www.ncepower.comNCEAP016N60VDNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power
nceap0135ak.pdf
http://www.ncepower.com NCEAP0135AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0135AK uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q .DS(ON) gThis device is ideal for high-frequ
nceap018n85ll.pdf
http://www.ncepower.comNCEAP018N85LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate c
nceap018n60gu.pdf
NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E
nceap016n10ll.pdf
http://www.ncepower.comNCEAP016N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =385ADS Duniquely optimized to provide the most efficient high frequency R =1.2m, typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap016n85ll.pdf
NCEAP016N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =385ADS Duniquely optimized to provide the most efficient high frequencyR =1.2m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excel
nceap018n60agu.pdf
NCEAP018N60AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =270A (Silicon Limited)DS DThe NCEAP018N60AGU uses Super Trench II technology that isR =1.4 m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =4.5VDS(ON) GSswitching perfor
nceap01nd35ag.pdf
http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo
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