NCEAP0178AK. Аналоги и основные параметры
Наименование производителя: NCEAP0178AK
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 354 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEAP0178AK
- подборⓘ MOSFET транзистора по параметрам
NCEAP0178AK даташит
nceap0178ak.pdf
http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc
nceap01p35ak.pdf
http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
nceap016n60vd.pdf
http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power
nceap0135ak.pdf
http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ
Другие IGBT... NCEA60P82AK, NCEA65NF036T, NCEA65NF036T4, NCEA85H25, NCEAP0135AK, NCEAP016N10LL, NCEAP016N60VD, NCEAP016N85LL, IRF1407, NCEAP018N60AGU, NCEAP018N60GU, NCEAP018N85LL, NCEAP01ND35AG, NCEAP01P35AK, NCEAP020N10LL, NCEAP020N85LL, NCEAP023N10LL
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