NCEAP028N85D. Аналоги и основные параметры

Наименование производителя: NCEAP028N85D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 245 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 220 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 1472 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCEAP028N85D

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP028N85D даташит

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NCEAP028N85D

NCEAP028N85D http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP028N85D uses Super Trench II technology that is V =85V,I =220A DS D uniquely optimized to provide the most efficient high frequency R =2.4m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate cha

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 nceap020n10ll.pdf pdf_icon

NCEAP028N85D

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

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NCEAP028N85D

NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga

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NCEAP028N85D

NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM

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