NCEAP030N85LL - описание и поиск аналогов

 ..1. Size:621K  ncepower
 nceap030n85ll.pdf 

http //www.ncepower.com NCEAP030N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =2.65m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

 7.1. Size:693K  ncepower
 nceap035n85gu.pdf 

http //www.ncepower.com NCEAP035N85GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP035N85GU uses Super Trench II technology that is V =85V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =2.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ch

 8.1. Size:747K  ncepower
 nceap020n10ll.pdf 

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

 8.2. Size:548K  ncepower
 nceap0178ak.pdf 

http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc

 8.3. Size:704K  ncepower
 nceap01p35ak.pdf 

http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw

 8.4. Size:692K  ncepower
 nceap016n60vd.pdf 

http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power

 8.5. Size:542K  ncepower
 nceap020n85ll.pdf 

NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga

 8.6. Size:660K  ncepower
 nceap0135ak.pdf 

http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ

 8.7. Size:595K  ncepower
 nceap018n85ll.pdf 

http //www.ncepower.com NCEAP018N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c

 8.8. Size:815K  ncepower
 nceap018n60gu.pdf 

NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E

 8.9. Size:597K  ncepower
 nceap016n10ll.pdf 

http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate

 8.10. Size:934K  ncepower
 nceap016n85ll.pdf 

NCEAP016N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excel

 8.11. Size:793K  ncepower
 nceap023n10ll.pdf 

NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM

 8.12. Size:967K  ncepower
 nceap020n60gu.pdf 

http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate

 8.13. Size:822K  ncepower
 nceap018n60agu.pdf 

NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor

 8.14. Size:395K  ncepower
 nceap026n10t.pdf 

http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power

 8.15. Size:436K  ncepower
 nceap025n60ag.pdf 

http //www.ncepower.com NCEAP025N60AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m

 8.16. Size:714K  ncepower
 nceap055n12d.pdf 

http //www.ncepower.com NCEAP055N12D NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =128A DS D uniquely optimized to provide the most efficient high frequency R =5.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gat

 8.17. Size:583K  ncepower
 nceap01nd35ag.pdf 

http //www.ncepower.com NCEAP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS lo

 8.18. Size:493K  ncepower
 nceap028n85d.pdf 

NCEAP028N85D http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP028N85D uses Super Trench II technology that is V =85V,I =220A DS D uniquely optimized to provide the most efficient high frequency R =2.4m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate cha