NCEAP4065QU - описание и поиск аналогов

 ..1. Size:707K  ncepower
 nceap4065qu.pdf 

http //www.ncepower.com NCEAP4065QU NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4065QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =110A DS D frequency switching performance. Both conduction and R =2.2m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an ex

 7.1. Size:932K  ncepower
 nceap40t20all.pdf 

http //www.ncepower.com NCEAP40T20ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exce

 7.2. Size:615K  ncepower
 nceap40t13agu.pdf 

http //www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excel

 7.3. Size:772K  ncepower
 nceap40p60g.pdf 

http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m

 7.4. Size:643K  ncepower
 nceap40nd80ag.pdf 

NCEAP40ND80AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R p

 7.5. Size:655K  ncepower
 nceap40t35all.pdf 

http //www.ncepower.com NCEAP40T35ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.63m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc

 7.6. Size:676K  ncepower
 nceap40pt15g.pdf 

http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

 7.7. Size:789K  ncepower
 nceap4045agu.pdf 

http //www.ncepower.com NCEAP4045AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4045AGU uses Super Trench technology that is uniquely V =40V,I =50A DS D optimized to provide the most efficient high frequency switching R =6.7m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c

 7.8. Size:907K  ncepower
 nceap40p80k.pdf 

http //www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency swit

 7.9. Size:566K  ncepower
 nceap40t14ak.pdf 

NCEAP40T14AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T14AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq

 7.10. Size:693K  ncepower
 nceap40nd40g.pdf 

http //www.ncepower.com NCEAP40ND40G NCE Automotive N-Channel Super Trench Power MOSFET General Features Description V =40V,I =43A DS D The NCEAP40ND40G uses Super Trench technology that is R =8.2m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =10.4m (typical) @ V =4.5V DS(ON) GS switching performance. Both conduction and swi

 7.11. Size:829K  ncepower
 nceap40t15agu.pdf 

 7.12. Size:897K  ncepower
 nceap40t11ak.pdf 

NCEAP40T11AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq

 7.13. Size:762K  ncepower
 nceap40t15gu.pdf 

http //www.ncepower.com NCEAP40T15GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited) DS D optimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10V DS(ON) GS performance. Both conduction and switching power losses are R =

 7.14. Size:871K  ncepower
 nceap40t35avd.pdf 

http //www.ncepower.com NCEAP40T35AVD NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.68m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate

 7.15. Size:777K  ncepower
 nceap40t20agu.pdf 

http //www.ncepower.com NCEAP40T20AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.95m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc

 7.16. Size:687K  ncepower
 nceap4075gu.pdf 

http //www.ncepower.com NCEAP4075GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4075GU uses Super Trench technology that is V =40V,I =86A DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =6.1m (typical) @ V =4.5V DS(ON

 7.17. Size:587K  ncepower
 nceap4090agu.pdf 

http //www.ncepower.com NCEAP4090AGU NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4090AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =125A DS D frequency switching performance. Both conduction and R =2.9m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an

 7.18. Size:543K  ncepower
 nceap40t11g.pdf 

 7.19. Size:637K  ncepower
 nceap40t11k.pdf 

NCEAP40T11K http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This DS(ON) g device is ideal for high-freq

 7.20. Size:703K  ncepower
 nceap40pt12k.pdf 

http //www.ncepower.com NCEAP40PT12K NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.9m (t

 7.21. Size:676K  ncepower
 nceap40nd80g.pdf 

http //www.ncepower.com NCEAP40ND80G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80G uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5V DS(

 7.22. Size:918K  ncepower
 nceap40t11ag.pdf 

http //www.ncepower.com NCEAP40T11AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell

 7.23. Size:640K  ncepower
 nceap40t17ad.pdf 

http //www.ncepower.com NCEAP40T17AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellen

 7.24. Size:482K  ncepower
 nceap40p60k.pdf 

http //www.ncepower.com NCEAP40P60K NCE P-Channel Super Trench Power MOSFET General Features Description V =-40V,I =-73A DS D The NCEAP40P60K uses Super Trench technology that is R =8.8m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =12.5m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and switching po

 7.25. Size:697K  ncepower
 nceap40pt15d.pdf 

http //www.ncepower.com NCEAP40PT15D NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5

 7.26. Size:696K  ncepower
 nceap4040q.pdf 

http //www.ncepower.com NCEAP4040Q NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4040Q uses Super Trench technology that is V =40V,I =42A DS D uniquely optimized to provide the most efficient high R =7.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =9.8m (typical) @ V =4.5V DS(ON) GS switching p

 7.27. Size:736K  ncepower
 nceap40t20ad.pdf 

http //www.ncepower.com NCEAP40T20AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excelle

 7.28. Size:711K  ncepower
 nceap40t17ag.pdf 

NCEAP40T17AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell

 7.29. Size:674K  ncepower
 nceap40p80g.pdf 

http //www.ncepower.com NCEAP40P80G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80A DS D optimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are R =9.0m (typical)

 7.30. Size:721K  ncepower
 nceap40nd40ag.pdf 

NCEAP40ND40AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43A DS D uniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charg

 7.31. Size:726K  ncepower
 nceap4045gu.pdf 

http //www.ncepower.com NCEAP4045GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4045GU uses Super Trench technology that is V =40V,I =50A DS D uniquely optimized to provide the most efficient high frequency R =6.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =8.5m (typical) @ V =4.5V DS(O

 7.32. Size:727K  ncepower
 nceap40nd60ag.pdf 

NCEAP40ND60AG http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charge x R produ

 7.33. Size:769K  ncepower
 nceap40t14g.pdf 

http //www.ncepower.com NCEAP40T14G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T14G uses Super Trench technology that is V =40V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5V DS(