NCEAP40ND80AG - Даташиты. Аналоги. Основные параметры

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ