NCEAP40T14AK Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEAP40T14AK
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 165 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 1920 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
NCEAP40T14AK Datasheet (PDF)
nceap40t14ak.pdf

NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t14g.pdf

http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(
nceap40t13agu.pdf

http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel
nceap40t15agu.pdf

NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SISS40DN | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2
History: SISS40DN | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2



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