NCEAP40T17AD. Аналоги и основные параметры
Наименование производителя: NCEAP40T17AD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 240 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 2550 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEAP40T17AD
- подборⓘ MOSFET транзистора по параметрам
NCEAP40T17AD даташит
nceap40t17ad.pdf
http //www.ncepower.com NCEAP40T17AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellen
nceap40t17ag.pdf
NCEAP40T17AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell
nceap40t13agu.pdf
http //www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excel
nceap40t14ak.pdf
NCEAP40T14AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T14AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq
Другие IGBT... NCEAP40T11AK, NCEAP40T11G, NCEAP40T11K, NCEAP40T13AGU, NCEAP40T14AK, NCEAP40T14G, NCEAP40T15AGU, NCEAP40T15GU, IRFZ44, NCEAP40T17AG, NCEAP40T20AD, NCEAP40T20AGU, NCEAP40T20ALL, NCEAP40T35ALL, NCEAP40T35AVD, NCEAP6035AG, NCEAP6050AQU
History: 3N140
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
d525 transistor | 2sc1583 | g60t60an3h | mosfet k8a50d | sl100 transistor | d2499 datasheet | 6r190p6 datasheet | 2n270











