NCEAP40T17AD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEAP40T17AD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 240 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 88.6 nC
trⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 2550 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEAP40T17AD
NCEAP40T17AD Datasheet (PDF)
nceap40t17ad.pdf
http://www.ncepower.com NCEAP40T17ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellen
nceap40t17ag.pdf
NCEAP40T17AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t13agu.pdf
http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel
nceap40t14ak.pdf
NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t15agu.pdf
NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses
nceap40t11ak.pdf
NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t15gu.pdf
http://www.ncepower.com NCEAP40T15GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited)DS Doptimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10VDS(ON) GSperformance. Both conduction and switching power losses are R =
nceap40t11g.pdf
http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m
nceap40t11k.pdf
NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq
nceap40t11ag.pdf
http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t14g.pdf
http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918