NCEAP40T20ALL. Аналоги и основные параметры
Наименование производителя: NCEAP40T20ALL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 255 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 2320.5 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00135 Ohm
Тип корпуса: TOLL
Аналог (замена) для NCEAP40T20ALL
- подборⓘ MOSFET транзистора по параметрам
NCEAP40T20ALL даташит
..1. Size:932K ncepower
nceap40t20all.pdf 

http //www.ncepower.com NCEAP40T20ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exce
3.1. Size:777K ncepower
nceap40t20agu.pdf 

http //www.ncepower.com NCEAP40T20AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.95m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc
3.2. Size:736K ncepower
nceap40t20ad.pdf 

http //www.ncepower.com NCEAP40T20AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excelle
6.1. Size:615K ncepower
nceap40t13agu.pdf 

http //www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excel
6.2. Size:655K ncepower
nceap40t35all.pdf 

http //www.ncepower.com NCEAP40T35ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.63m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc
6.3. Size:566K ncepower
nceap40t14ak.pdf 

NCEAP40T14AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T14AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq
6.5. Size:897K ncepower
nceap40t11ak.pdf 

NCEAP40T11AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq
6.6. Size:762K ncepower
nceap40t15gu.pdf 

http //www.ncepower.com NCEAP40T15GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited) DS D optimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10V DS(ON) GS performance. Both conduction and switching power losses are R =
6.7. Size:871K ncepower
nceap40t35avd.pdf 

http //www.ncepower.com NCEAP40T35AVD NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.68m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
6.9. Size:637K ncepower
nceap40t11k.pdf 

NCEAP40T11K http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This DS(ON) g device is ideal for high-freq
6.10. Size:918K ncepower
nceap40t11ag.pdf 

http //www.ncepower.com NCEAP40T11AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell
6.11. Size:640K ncepower
nceap40t17ad.pdf 

http //www.ncepower.com NCEAP40T17AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellen
6.12. Size:711K ncepower
nceap40t17ag.pdf 

NCEAP40T17AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell
6.13. Size:769K ncepower
nceap40t14g.pdf 

http //www.ncepower.com NCEAP40T14G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T14G uses Super Trench technology that is V =40V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5V DS(
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