Справочник MOSFET. FQB30N06L

 

FQB30N06L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB30N06L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TO263 D2PAK
     - подбор MOSFET транзистора по параметрам

 

FQB30N06L Datasheet (PDF)

 ..1. Size:1628K  fairchild semi
 fqb30n06l fqi30n06l.pdf pdf_icon

FQB30N06L

October 2008QFETFQB30N06L / FQI30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

 ..2. Size:1221K  onsemi
 fqb30n06l.pdf pdf_icon

FQB30N06L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:1034K  fairchild semi
 fqb30n06ltm.pdf pdf_icon

FQB30N06L

October 2008QFETFQB30N06L / FQI30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

 6.1. Size:661K  fairchild semi
 fqb30n06tm.pdf pdf_icon

FQB30N06L

May 2001TMQFETFQB30N06 / FQI30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially ta

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Другие MOSFET... SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 , FQB22P10 , FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , IRF740 , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 .

History: FQB4N25TM | STS4DNF30L | STS8201 | STS65R580DS2TR | STS4DPFS30L

 

 
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