Справочник MOSFET. NCEAP60ND30AG

 

NCEAP60ND30AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEAP60ND30AG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 21.8 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 183.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0175 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEAP60ND30AG

 

 

NCEAP60ND30AG Datasheet (PDF)

 ..1. Size:389K  ncepower
 nceap60nd30ag.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS

 5.1. Size:644K  ncepower
 nceap60nd60g.pdf

NCEAP60ND30AG NCEAP60ND30AG

NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

 7.1. Size:713K  ncepower
 nceap60t15g.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

 7.2. Size:759K  ncepower
 nceap6055agu.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.comNCEAP6055AGUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6055AGU uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5VDS

 7.3. Size:723K  ncepower
 nceap60t20d.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c

 7.4. Size:623K  ncepower
 nceap60p90ak.pdf

NCEAP60ND30AG NCEAP60ND30AG

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and

 7.5. Size:754K  ncepower
 nceap60t12ak.pdf

NCEAP60ND30AG NCEAP60ND30AG

NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.6. Size:698K  ncepower
 nceap6050aqu.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.comNCEAP6050AQUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP6050AQU uses Super Trench technology that is V =60V,I =68ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power lossesR =7.7m (typical) @

 7.7. Size:740K  ncepower
 nceap6035ag.pdf

NCEAP60ND30AG NCEAP60ND30AG

http://www.ncepower.com NCEAP6035AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6035AG uses Super Trench technology that is V =60V,I =48ADS Duniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5VDS(O

 7.8. Size:675K  ncepower
 nceap60t12ad.pdf

NCEAP60ND30AG NCEAP60ND30AG

NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.9. Size:395K  ncepower
 nceap6090agu.pdf

NCEAP60ND30AG NCEAP60ND30AG

NCEAP6090AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6090AGU uses Super Trench technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.5m (typical) @ V =

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