Справочник MOSFET. NCEAP60T12AD

 

NCEAP60T12AD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEAP60T12AD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCEAP60T12AD

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEAP60T12AD Datasheet (PDF)

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NCEAP60T12AD

NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 3.1. Size:754K  ncepower
nceap60t12ak.pdfpdf_icon

NCEAP60T12AD

NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 5.1. Size:713K  ncepower
nceap60t15g.pdfpdf_icon

NCEAP60T12AD

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

 6.1. Size:723K  ncepower
nceap60t20d.pdfpdf_icon

NCEAP60T12AD

http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c

Другие MOSFET... NCEAP40T35ALL , NCEAP40T35AVD , NCEAP6035AG , NCEAP6050AQU , NCEAP6055AGU , NCEAP6090AGU , NCEAP60ND30AG , NCEAP60ND60G , IRF9540 , NCEAP60T12AK , NCEAP60T15G , NCEAP60T20D , NCEB301G , NCEB301Q , NCEP008N30GU , NCEP008NH40AGU , NCEP008NH40GU .

History: PJP2NA60 | UPA2770GR | AP18T10GP

 

 
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