NCEP0107R. Аналоги и основные параметры
Наименование производителя: NCEP0107R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2.2 ns
Cossⓘ - Выходная емкость: 53 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
Тип корпуса: SOT-223
Аналог (замена) для NCEP0107R
- подборⓘ MOSFET транзистора по параметрам
NCEP0107R даташит
ncep0107r.pdf
http //www.ncepower.com NCEP0107R NCE N-Channel Super Trench Power MOSFET Description The NCEP0107R uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switchin
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ncep018n60d.pdf
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ncep0178a.pdf
Pb Free Product http //www.ncepower.com NCEP0178A NCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep0120q.pdf
http //www.ncepower.com NCEP0120Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0120Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =20A frequency switching performance. Both conduction and RDS(ON)=36m (typical) @ VGS=10V switching power losses are minimized due to an extremely low E
ncep018n60.pdf
NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =
ncep01p35ak.pdf
Pb Free Product http //www.ncepower.com NCEP01P35AK NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep0114as.pdf
Pb Free Product http //www.ncepower.com NCEP0114AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие IGBT... NCEAP60T15G, NCEAP60T20D, NCEB301G, NCEB301Q, NCEP008N30GU, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, 2N7002, NCEP0109AR, NCEP0116AS, NCEP011N25QU, NCEP011NH25QU, NCEP012N85LL, NCEP0135AF, NCEP0140AL, NCEP0155AG
History: NCEP0116AS
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