NCEP0116AS - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP0116AS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9.9 ns
Cossⓘ - Выходная емкость: 389 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0106 Ohm
Тип корпуса: SOP8
Аналог (замена) для NCEP0116AS
NCEP0116AS Datasheet (PDF)
ncep0116as.pdf
Pb Free Producthttp://www.ncepower.com NCEP0116ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep0116k.pdf
http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep011n25qu.pdf
http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p
ncep011nh25qu.pdf
http://www.ncepower.com NCEP011N25QUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP011NH25QU uses Super Trench II technologyV =25V,I =161ADS Dthat is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5VDS(ON) GSswitching p
Другие MOSFET... NCEB301G , NCEB301Q , NCEP008N30GU , NCEP008NH40AGU , NCEP008NH40GU , NCEP0107AR , NCEP0107R , NCEP0109AR , IRF4905 , NCEP011N25QU , NCEP011NH25QU , NCEP012N85LL , NCEP0135AF , NCEP0140AL , NCEP0155AG , NCEP015N30GU , NCEP015N60LL .
History: PTP02N04N
History: PTP02N04N
Список транзисторов
Обновления
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