NCEP01P40AGU datasheet, аналоги, основные параметры

Наименование производителя: NCEP01P40AGU

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 260 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP01P40AGU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP01P40AGU даташит

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NCEP01P40AGU

http //www.ncepower.com NCEP01P40AGU NCE P-Channel Super Trench Power MOSFET Description The NCEP01P40AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-40A DS D switching performance. Both conduction and switching power R =35m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely

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 ncep01p35a.pdf pdf_icon

NCEP01P40AGU

Pb Free Product http //www.ncepower.com NCEP01P35A NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-

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NCEP01P40AGU

Pb Free Product http //www.ncepower.com NCEP01P60G NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =22m (typical) @ V =-10V DS(ON) GS losses are minimized due to

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 ncep01p35ag.pdf pdf_icon

NCEP01P40AGU

http //www.ncepower.com NCEP01P35AG NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-35A DS D switching performance. Both conduction and switching power R =37m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely l

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