Справочник MOSFET. NCEP01P60AG

 

NCEP01P60AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP01P60AG
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEP01P60AG

 

 

NCEP01P60AG Datasheet (PDF)

 ..1. Size:659K  ncepower
 ncep01p60ag.pdf

NCEP01P60AG NCEP01P60AG

NCEP01P60AGhttp://www.ncepower.comNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =19.5m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

 5.1. Size:660K  ncepower
 ncep01p60g.pdf

NCEP01P60AG NCEP01P60AG

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to

 7.1. Size:653K  ncepower
 ncep01p35a.pdf

NCEP01P60AG NCEP01P60AG

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-

 7.2. Size:841K  ncepower
 ncep01p35ag.pdf

NCEP01P60AG NCEP01P60AG

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l

 7.3. Size:598K  ncepower
 ncep01p40agu.pdf

NCEP01P60AG NCEP01P60AG

http://www.ncepower.com NCEP01P40AGUNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P40AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-40ADS Dswitching performance. Both conduction and switching power R =35m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely

 7.4. Size:637K  ncepower
 ncep01p35ak.pdf

NCEP01P60AG NCEP01P60AG

Pb Free Producthttp://www.ncepower.com NCEP01P35AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

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