Справочник MOSFET. NCEP01T12D

 

NCEP01T12D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP01T12D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 185 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 129 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 67 ns
   Cossⓘ - Выходная емкость: 641 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

NCEP01T12D Datasheet (PDF)

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NCEP01T12D

http://www.ncepower.com NCEP01T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:347K  ncepower
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NCEP01T12D

Pb Free Producthttp://www.ncepower.com NCEP01T12NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.1. Size:348K  ncepower
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NCEP01T12D

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.2. Size:283K  ncepower
ncep01t11d.pdfpdf_icon

NCEP01T12D

Pb Free Producthttp://www.ncepower.com NCEP01T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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History: AON7702B | FDS6064N3 | RJK0395DPA | 4N65KG-TM3-T | FDMC86340 | FQPF630 | IRF7807VD2

 

 
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