NCEP020N10LL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP020N10LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 330 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 1500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TOLL
Аналог (замена) для NCEP020N10LL
NCEP020N10LL Datasheet (PDF)
ncep020n10ll.pdf

NCEP020N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =330ADS Dswitching performance. Both conduction and switching power R =1.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep020n60agu.pdf

NCEP020N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =180ADS DThe NCEP020N60AGU uses Super Trench II technology thatR =1.8 m (typical) @ V =10VDS(ON) GSis uniquely optimized to provide the most efficient highR =2.5 m (typical) @ V =4.5VDS(ON) GSfrequency switching performance. Both conduction and
ncep020n85d.pdf

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n85ll.pdf

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a
Другие MOSFET... NCEP01T13B , NCEP01T13BD , NCEP01T13LL , NCEP01T18D , NCEP01T18VD , NCEP01T25LL , NCEP01T25T , NCEP01T30T , RU6888R , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , NCEP020N85T .
History: AP9418GM | FQPF9N25CYDTU | BLF7G20L-200 | HM50N03K | AONS66641T | PJP2NA60 | 2SK3417
History: AP9418GM | FQPF9N25CYDTU | BLF7G20L-200 | HM50N03K | AONS66641T | PJP2NA60 | 2SK3417



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