NCEP020N85 - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP020N85
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 340 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 2450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP020N85
NCEP020N85 Datasheet (PDF)
ncep020n85.pdf
NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n85 ncep020n85d.pdf
NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n85d.pdf
NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n85ll.pdf
http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a
Другие MOSFET... NCEP01T25LL , NCEP01T25T , NCEP01T30T , NCEP020N10LL , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU , IRFZ48N , NCEP020N85D , NCEP020N85LL , NCEP020N85T , NCEP0210Q , NCEP0212F , NCEP0218G , NCEP0218K , NCEP0220F .
History: 2SK3863 | JCS2N60N | NCEP01T25T | PTP16N65 | APT20M20JFLL | PTP20N50A | TK25A60X5
History: 2SK3863 | JCS2N60N | NCEP01T25T | PTP16N65 | APT20M20JFLL | PTP20N50A | TK25A60X5
Список транзисторов
Обновления
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