NCEP0218G datasheet, аналоги, основные параметры

Наименование производителя: NCEP0218G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 105 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 82 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP0218G

- подборⓘ MOSFET транзистора по параметрам

 

NCEP0218G даташит

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 ncep0218g.pdf pdf_icon

NCEP0218G

http //www.ncepower.com NCEP0218G NCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 6.1. Size:1012K  ncepower
 ncep0218k.pdf pdf_icon

NCEP0218G

http //www.ncepower.com NCEP0218K NCE N-Channel Super Trench Power MOSFET Description The NCEP0218K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching

 7.1. Size:315K  ncepower
 ncep0212f.pdf pdf_icon

NCEP0218G

http //www.ncepower.com NCEP0212F NCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 7.2. Size:360K  ncepower
 ncep0210q.pdf pdf_icon

NCEP0218G

http //www.ncepower.com NCEP0210Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co

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