Справочник MOSFET. NCEP0218G

 

NCEP0218G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP0218G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 105 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 18 nC
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 82 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP0218G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP0218G Datasheet (PDF)

 ..1. Size:398K  ncepower
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NCEP0218G

http://www.ncepower.com NCEP0218GNCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 6.1. Size:1012K  ncepower
ncep0218k.pdfpdf_icon

NCEP0218G

http://www.ncepower.com NCEP0218KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0218K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching

 7.1. Size:315K  ncepower
ncep0212f.pdfpdf_icon

NCEP0218G

http://www.ncepower.com NCEP0212FNCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 7.2. Size:360K  ncepower
ncep0210q.pdfpdf_icon

NCEP0218G

http://www.ncepower.com NCEP0210QNCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co

Другие MOSFET... NCEP020N60AGU , NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , NCEP020N85T , NCEP0210Q , NCEP0212F , EMB04N03H , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , NCEP023N10T , NCEP023N85M .

 

 
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