FQB34N20L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQB34N20L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 180 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO263 D2PAK
- подбор MOSFET транзистора по параметрам
FQB34N20L Datasheet (PDF)
fqb34n20l fqi34n20l.pdf

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been
fqb34n20l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqb34n20ltm.pdf

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been
fqb34n20 fqi34n20.pdf

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia
Другие MOSFET... FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , IRF640 , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 .
History: HY3410MF | HY3208P



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