NCEP0225F datasheet, аналоги, основные параметры
Наименование производителя: NCEP0225F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 128 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO-220F
Аналог (замена) для NCEP0225F
- подборⓘ MOSFET транзистора по параметрам
NCEP0225F даташит
ncep0225f.pdf
http //www.ncepower.com NCEP0225F NCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0225k.pdf
http //www.ncepower.com NCEP0225K NCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0225g.pdf
http //www.ncepower.com NCEP0225G NCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep0220f.pdf
http //www.ncepower.com NCEP0220F NCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
Другие IGBT... NCEP020N85D, NCEP020N85LL, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G, NCEP0218K, NCEP0220F, RU7088R, NCEP0225G, NCEP0225K, NCEP0230D, NCEP023N10T, NCEP023N85M, NCEP023N85T, NCEP023NH30GU, NCEP02503S
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