Справочник MOSFET. NCEP0225K

 

NCEP0225K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0225K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 135 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 25 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 25 nC
   Время нарастания (tr): 9 ns
   Выходная емкость (Cd): 128 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для NCEP0225K

 

 

NCEP0225K Datasheet (PDF)

 ..1. Size:326K  ncepower
 ncep0225k.pdf

NCEP0225K NCEP0225K

http://www.ncepower.com NCEP0225KNCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 6.1. Size:323K  ncepower
 ncep0225f.pdf

NCEP0225K NCEP0225K

http://www.ncepower.com NCEP0225FNCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 6.2. Size:356K  ncepower
 ncep0225g.pdf

NCEP0225K NCEP0225K

http://www.ncepower.com NCEP0225GNCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 7.1. Size:339K  ncepower
 ncep0220f.pdf

NCEP0225K NCEP0225K

http://www.ncepower.com NCEP0220FNCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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