NCEP023N85T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP023N85T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 290 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 2050 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: TO-247
Аналог (замена) для NCEP023N85T
NCEP023N85T Datasheet (PDF)
ncep023n85t.pdf

NCEP023N85TNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo
ncep023n85m.pdf

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex
ncep023n85.pdf

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
ncep023n85d.pdf

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
Другие MOSFET... NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , NCEP023N10T , NCEP023N85M , IRFP064N , NCEP023NH30GU , NCEP02503S , NCEP02505S , NCEP02515F , NCEP02525G , NCEP02525K , NCEP02580D , NCEP02590 .
History: 2SK2541 | KO6401-HF | HY029N10P
History: 2SK2541 | KO6401-HF | HY029N10P



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