NCEP023N85T datasheet, аналоги, основные параметры

Наименование производителя: NCEP023N85T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 290 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 37 ns

Cossⓘ - Выходная емкость: 2050 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCEP023N85T

- подборⓘ MOSFET транзистора по параметрам

 

NCEP023N85T даташит

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 ncep023n85t.pdf pdf_icon

NCEP023N85T

NCEP023N85T NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo

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NCEP023N85T

NCEP023N85M, NCEP023N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ex

 4.2. Size:940K  ncepower
 ncep023n85.pdf pdf_icon

NCEP023N85T

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.3. Size:940K  ncepower
 ncep023n85d.pdf pdf_icon

NCEP023N85T

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

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Другие IGBT... NCEP0218K, NCEP0220F, NCEP0225F, NCEP0225G, NCEP0225K, NCEP0230D, NCEP023N10T, NCEP023N85M, AO4468, NCEP023NH30GU, NCEP02503S, NCEP02505S, NCEP02515F, NCEP02525G, NCEP02525K, NCEP02580D, NCEP02590