NCEP025N60 datasheet, аналоги, основные параметры

Наименование производителя: NCEP025N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 190 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00265 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP025N60

- подборⓘ MOSFET транзистора по параметрам

 

NCEP025N60 даташит

 ..1. Size:1320K  ncepower
 ncep025n60.pdf pdf_icon

NCEP025N60

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 ..2. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf pdf_icon

NCEP025N60

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 0.1. Size:748K  ncepower
 ncep025n60ag.pdf pdf_icon

NCEP025N60

http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)

 0.2. Size:333K  ncepower
 ncep025n60g.pdf pdf_icon

NCEP025N60

http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP02580D, NCEP02590, NCEP02590D, NCEP02590T, NCEP025F90D, NCEP025F90T, NCEP025N12LL, NCEP025N30G, IRFB4110, NCEP025N60AG, NCEP025N60D, NCEP025N60G, NCEP025N85LL, NCEP0260, NCEP0260D, NCEP026N10, NCEP026N10D