Справочник MOSFET. NCEP025N60G

 

NCEP025N60G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP025N60G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 145 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 165 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP025N60G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP025N60G Datasheet (PDF)

 ..1. Size:333K  ncepower
 ncep025n60g.pdf pdf_icon

NCEP025N60G

http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 4.1. Size:1320K  ncepower
 ncep025n60.pdf pdf_icon

NCEP025N60G

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 4.2. Size:748K  ncepower
 ncep025n60ag.pdf pdf_icon

NCEP025N60G

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

 4.3. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf pdf_icon

NCEP025N60G

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP02590T , NCEP025F90D , NCEP025F90T , NCEP025N12LL , NCEP025N30G , NCEP025N60 , NCEP025N60AG , NCEP025N60D , IRF3710 , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 , NCEP026N10D , NCEP026N10F , NCEP026N10LL , NCEP026N10M .

History: SI3911DV-T1 | IPS60R360PFD7S | MTH15N40

 

 
Back to Top

 


 
.