Справочник MOSFET. NCEP028N12LL

 

NCEP028N12LL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP028N12LL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 230 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 870 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для NCEP028N12LL

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP028N12LL Datasheet (PDF)

 ..1. Size:324K  ncepower
 ncep028n12ll.pdf pdf_icon

NCEP028N12LL

NCEP028N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin

 6.1. Size:876K  ncepower
 ncep028n85d.pdf pdf_icon

NCEP028N12LL

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.2. Size:355K  ncepower
 ncep028n85 ncep028n85d.pdf pdf_icon

NCEP028N12LL

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:876K  ncepower
 ncep028n85.pdf pdf_icon

NCEP028N12LL

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP026N10 , NCEP026N10D , NCEP026N10F , NCEP026N10LL , NCEP026N10M , NCEP026N10T , NCEP026N85 , NCEP026N85D , K3569 , NCEP028N60AGU , NCEP029N10 , NCEP029N10D , NCEP02T10 , NCEP02T10LL , NCEP02T10T , NCEP02T11D , NCEP02T11T .

History: LNE10R040W3 | IRHLF87Y20 | SI6469DQ | FDD4243-F085 | SI2303BDS | ALD1103PBL | HSP150N02

 

 
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